Thin Films - Interfaces and Phenomena: Volume 54 (MRS Proceedings) »

Feb 28, 2011 · TiSi 2 films produced from co-sputtered Ti/Si mixtures by rapid thermal processing at temperatures around 630 ° C were found to have a higher resistivity than films formed by the solid state reaction of deposited Ti with 100 silicon during asimilar anneal. Diffraction studies indicated the films comprised of the C49 phase only. Feb 26, 2011 · The Structure and Electrical Properties of Au Contacts to GaAs - Volume 54 - Z. Liliental-Weber, N. Newman, W. E. Spicer, R. Grónsky, J. Washburn, E. R. Weber. Feb 26, 2011 · Volume 54 Symposium E – Thin Films–Interfaces and Phenomena 1985, 511 Heterojunction Ohmic Contacts to Si Using Ge/Si n/nStructures M. J. Hafich a1, R. L. Gillenwater a1, G. Y. Robinson a1 and P. Sheldon a2. Feb 26, 2011 · Volume 54 Symposium E – Thin Films–Interfaces and Phenomena 1985, 245 Epitaxial Growth of Transition Metal Silicides on Silicon L. J. Chen a1, H. C. Cheng a1 and W. T. Lin.

Volume 54 Symposium E – Thin Films–Interfaces and Phenomena 1985, 267 Silicon Layers Grown on Patterned Substrates by Liquid Phase Epitaxy E. Bauser a1, D. KÄss a2, M. Warth a1 a3 and H. P. Strunk a2 a4. Oct 01, 2007 · The focus of this review is confined to the preparation and physical properties of those complex oxide thin films COTFs crystallizing in a perovskite structure e.g. LaMnO 3 or derived from a perovskite-type structure e.g. YBa 2 Cu 3 O 7. Figs. 1a and 1b represent the parent perovskite structure ABO 3 and that of YBa 2 Cu 3 O 7 as an example of a structure derived from the simple. Nowadays the need for new energy sources required to let us overcome the intensive use of fossil fuels is more actual than ever. Some efforts have been focused on the development of a system to produce and store hydrogen in an affordable way; right now, though, this gaseous fuel is still produced by the decomposition of biomass.

3. Results and Discussion. Given the thin physical thickness for Al 2 O 3 used in the MIM structures 20 and 10 nm, we have electrically characterized MIS devices in which an even thinner Al 2 O 3 = 6 nm has been deposited on silicon by using the same ALD conditions without thermal annealing. Therefore, by using a silicon surface with very low atomic surface roughness as compared to a. PV 99-1, Seattle, Washington, Spring 1999, $64.00 member - $77.00 nonmember. Current state-of-the-art defects in silicon are detailed in this proceedings volume. As integrated circuits become more dense, crystalline and other defects in silicon wafers have a greater effect on the properties of the circuits. Sep 03, 2003 · Thin Film Division, Physics Department, Linköping University, S-581 83 Linköping, Sweden J. E. Greene Frederick Seitz Materials Research Laboratory and Department of Materials Science, University of Illinois, Urbana, Illinois 61801.

Neutron reflectivity measurements on deuterated polystyrene dPS thin films reveal a strong dependence of the coefficient of thermal expansion CTE on both the thickness of the film and the specific confinement boundaries. A direct comparison is made between films on low energy, fluorinated polyimide fPI substrates with a free surface bilayer and the same films after capping the bilayer. The intent of this review is to utilize the mechanics of thin films in order to define quantitative procedures for predicting interface decohesion motivated by residual stress. The emphasis is on the role of the interface debond energy, especially methods for measuring this parameter in an accurate and reliable manner. Experimental results for metal films on dielectric substrates are reviewed. Aluminum alloys have virtually replaced aluminum thin films for interconnections in very large‐scale integration because of their improved reliability. Mechanical stress is a problem of growing importance in these interconnections. Stress as a function of temperature was measured for thin aluminum films on an oxidized silicon substrate and several aluminum alloys and layered films consisting.

The field of active electronic and photonic devices made with organic and polymeric materials is rapidly growing, and new advances are being made both in attaining a deeper understanding of device phenomena and in developing novel materials. The presentations in this book emphasize the broad scientific and technological interest in organic materials for both electronic and photonic applications.

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