Microcrystalline and Nanocrystalline Semiconductors - 1998: Volume 536 (MRS Proceedings) » holypet.ru

The optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm 2.This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. SYMPOSIUM PROCEEDINGS VOLUME 536 Macrocrystalline and Nanocrystalline Semiconductors—1998 Symposium held November 30-December 3,1998, Boston, Massachusetts, U.S.A. EDITORS: Leigh T. Canham Defence Research Agency Malvern, United Kingdom Michael J. Sailor University of California, San Diego La Jolla, California, U.S.A. Kazunobu Tanaka.

Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. Microcrystalline and Nanocrystalline Semiconductors - 1998: Volume 536 - MRS Proceedings Paperback Leigh T. Canham £22.99 Paperback. Aug 09, 2011 · Volume 536 Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 1998, 173 Functionalization of Porous Silicon Surfaces through Hydrosilylation Reactions.

Volume 536 Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 1998, 545 Pressure Induced Structural Transformations in Nanocluster Assembled Gallium Arsenide S. Kodiyalam a1, A. Chatterjee a1, I. Ebbsjö a2, R. K. Kalia a1, H. Kikuchi a1, A. Nakano a1, J. P. Rino a3 and P. Vashishta a1. Volume 536 Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 1998, 371 Novel Route for the Preparation of CuSe and CuInSe 2 Nanoparticles. Surface Stoichiometry of CdSe Nanocrystals - Volume 536 - Jason Taylor, Tadd Kippeny, Jonathan C. Bennett, Mengbing Huang, Leonard C. Feldman, Sandra J. Rosenthal. ``In situ studies of electronic and vibrational properties of Si nanoparticles'', in Microcrystalline and Nanocrystalline Semiconductors - 1998, Materials Research Society Symposia Proceedings, V. 536, edited by L. T. Canham et al., MRS, Warrendale, 1999, p. 287.pdf. A second comment corresponds to the effect of the contributions of volume scattering by the pores of the thick PS layer to the diffuse. Eds., Microcrystalline and Nanocrystalline Semiconductors: Material Research Society Symposium Proceedings Vol. 536, MRS, Boston, 1998, p. 293. Google Scholar. D. Buttard, G. Dolino, D. Bellet, T. Baumbach.

Microcrystalline and Nanocrystalline Semiconductors - 1998: Volume 536 (MRS Proceedings)

Nov 27, 2000 · Hydrogenated Microcrystalline Silicon: From Material to Solar Cells N. Wyrsch et al 2000 MRS Proceedings 609 A15.1 Crossref. Synthesis, Raman scattering, and infrared spectra of a new condensed form of GaN nanophase material Cao, Y. G. et al. The compatibility of both bulk and porous silicon at the subcutaneous site has been assessed for the first time, following ISO standard procedures. Feb 08, 2000 · Fig. 2 depicts the temperature dependence of the dark conductivity of porous Si films with different porosities. In this figure, as the porosity increases, the activation energy E a of the Arrhenius relation σ=σ 0 exp −E a / k B T increases, indicating that apparently the porosity has an influence on the charge transport mechanism, i.e. thermal excitation of carriers in the conduction. 8:30 AM A1.1/B1.1 HYBRID AMORPHOUS AND POLYCRYSTALLINE SILICON DEVICES FOR LARGE-AREA ELECTRONICS. Ping Mei, James B. Boyce, David K. Fork, Greg Anderson, Xerox Palo Alto Research Center, Palo Alto, CA; Mike Hack, Rene Lujan, Xerox dpiX, Palo Alto, CA. A natural extension of active matrix technology is the monolithic integration of peripheral drivers for the. Aug 01, 2002 · 2.2. Characterization. Absorption spectra of ZnS:Mn nanocrystals in a micellar solution at room temperature were measured at a scanning speed of 40 nm min −1, sampling intervals of 0.2 nm and a bandwidth of 1.0 nm by UV–visible absorption spectrometer JASCO, V550, where a micellar solution was used as a reference.Emission and excitation spectra were measured at 20 and 10 nm min −1.

Feb 15, 2000 · R.W. Collins Ed., Advances in Microcrystalline and Nanocrystalline Semiconductors, Materials Research Society Symposia Proceedings No. 452, MRS, Pittsburgh 1996, p. 225 Google Scholar [29]. in Microcrystalline and Nanocrystalline Semiconductors - 1998, Materials Research Society Symposia Proceedings, V. 536, edited by L. T. Canham et al., MRS, Warrendale, 1999, p. 287.

May 01, 2001 · The PLE peak, 335.4 nm 3.70 eV, observed in the spectrum of the sample ZSAA5-0, is blue-shifted, as compared to 351.5 nm 3.53 eV for the bulk sample of 250 nm in diameter.The PLE peak shifts to 330.6 nm 3.75 eV after aging for 24 h at 80°C, as shown in Fig. 6c.This blue shift reveals the stronger confinement of quantum dots in the insulator polymer matrix as a result of the isolation. G. Williams and G. S. V. Coles, Gas sensing properties of nanocrystalline metal oxide powders produced by a laser evaporation technique, Journal of Materials Chemistry 87, 1657–1664 1998. CrossRef Google Scholar.

"Hot electron luminescence in AIIIBV semiconductors and MQW structures GaAs/AlGaAs", in: Proceedings of the 20th International Conference on the Physics of Semiconductors, edited by E. M. Anastassakis and J. D. Joannopoulos, World Scientific, Singapore, 1990, V. 3, p. 1037.

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