Materials, Technology and Reliability for Advanced Interconnects 2005: Volume 863 (MRS Proceedings) »

A Spin-on Dielectric Material for High Aspect Ratio Gap.

Materials, technology and reliability for advanced interconnects--2005. Warrendale, Pa.: Materials Research Society, ©2005 OCoLC607616083 Online version: Materials, technology and reliability for advanced interconnects--2005. Warrendale, Pa.: Materials Research Society, ©2005 OCoLC607638217: Material Type: Conference publication. Materials, Technology and Reliability for Advanced Interconnects 2005: Volume 863 - MRS Proceedings Hardback Paul R. Besser £25.99 Hardback. Feb 01, 2011 · Volume 863 Symposium B – Materials, Technology and Reliability of Advanced Interconnects 2005, B8.5 A Spin-on Dielectric Material for High Aspect Ratio Gap Fill. Feb 01, 2011 · Volume 863 Symposium B – Materials, Technology and Reliability of Advanced Interconnects 2005, B4.4 Barrier Integrity Effect on Leakage Mechanism and Dielectric Reliability of Copper/OSG Interconnects.

Feb 01, 2011 · Volume 863 Symposium B – Materials, Technology and Reliability of Advanced Interconnects 2005, B7.8/O11.8 Stress-induced Void Formation in Passivated Cu Films. Volume 863 Symposium B – Materials, Technology and Reliability of Advanced Interconnects 2005, B10.1 Flip Chip Reliability of GaAs on Si Thinfilm Substrates Using AuSn Solder Bumps Hermann Oppermanna1, Matthias Huttera1, Matthias Kleina1, Gunter Engelmanna1, Michael Toeppera1and Jürgen Wolfa1. 2005 English In: Materials, Technology and Reliability of Advanced Interconnects-2005 / [ed] Besser PR; McKerrow AJ; Iacopi F; Wong CP; Vlassak JJ, WARRENDALE, PA: MATERIALS RESEARCH SOCIETY, 2005, Vol. 863, p. 393-398 Conference paper, Published paper Refereed Abstract [en] Wafer-level three-dimensional 3D integration is an emerging technology to increase. The thermal oxidation of Cu interconnects, at 350°C in air, has been studied as a function of thickness of a CoWP capping layer. For thin CoWP layers 25 nm, a thick oxide layer 200 nm is formed which is mainly composed of Cu 2 0. For thick CoWP layers 50 nm, the oxide layer is much thinner 36 nm and is mainly composed of CoO.

Volume 863 Symposium B – Materials, Technology and Reliability of Advanced Interconnects 2005, B7.9/O11.9 Stress Generation in PECVD Silicon Nitride Thin Films for Microelectronics Applications M. Belyansky a1, N. Klymko a1, A. Madan a1, A. Mallikarjunan a1. Mar 01, 2010 · Tőkei, M. Saglimbeni, M. Van Hove, Detection of Cu and H 2 O in low-k dielectrics by TVS measurements, in: Proc. MRS 2006, San Francisco, CA, Materials, Technology and Reliability of low-k Dielectrics and Copper Interconnects, 2006, pp. 0914-F02-02.

Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm 2 with ambient temperatures ranging from 325°C to 375°C. The temperature coefficients of resistance TCR values were measured prior to current stressing to calculate. Jul 20, 2005 · Electrical leakage and breakdown of low-dielectric constant low-k dielectrics are increasingly becoming major reliability issues as inter-metal spacings in interconnects scale towards the 0.1μm technology node. In Cu damascene structures, these issues are greatly alleviated by the retention of a thin layer of hardmask, which is also known as buried capping layer BCL, after. Porous ultralow κ dielectric film pores were sealed by 1–5nm films of boron carbonitride, itself a dielectric. The BC0.9N0.07 films were deposited by chemical vapor deposition at 335°C on etched and ashed blanket films and patterned films of porous methyl silsesquioxane PMSQ. The penetration of Ta through the boron carbonitride film and into the porous low κ substrate following exposure.

Jan 01, 2011 · Besides being the dominant diffusion path in Cu interconnect, the Cu/ dielectric cap interface was also reported to be the preferred void nucleation site Meier et al., 1999, Hau-Riege, 2002.This resulted in Cu interconnects exhibiting longer electromigration lifetimes in via-below interconnect configuration, than in via-above interconnect configuration Gan et al., 2001, Gan et al., 2005. Dec 27, 2004 · Copper wires were prepared in a silicon oxide matrix using the methods of semiconductor manufacturing and were electrically characterized. The width of the smallest structure was 40 nm and of the largest, 1000 nm; the heights were 50, 155, and 230 nm. Many samples of each size have been measured in order to perform a systematic investigation. Jul 24, 2008 · Ultralow dielectric constant pSiCOH films have been prepared using tetramethylcyclotetrasiloxane TMCTS as the skeleton precursor and two different porogen precursors. The porogen has been removed from the deposited films by thermal annealing at 400 °C, obtaining films with dielectric constants down to 1.95. The films have been investigated by Fourier transform infrared. Aug 28, 2008 · As interconnects are scaled down, much effort is made to achieve ultralow k material with a dielectric constant lower than 2.5. Thus, many new precursors are investigated in plasma-enhanced chemical vapor deposition. Apr 29, 2008 · Electromigration experiments using Cu ∕ low-k interconnect tree structures were carried out in order to study the effects of active atomic sinks and reservoirs on interconnect reliability. In all cases, failures occurred after a long period of void growth. Kinetic parameters were extracted from resistance versus time data, giving D z 0, eff = 3.9 × 10 − 10 m 2 ∕ s and z = 0.40.

Aug 25, 2009 · Tantalum migration from the anode sidewall barrier was observed in Cu interconnects/SiOCH low-k dielectrics after voltage ramp and constant voltage stress. This phenomenon was found to contribute to leakage current as observed from the current-voltage I-V and current-time I-t leakage curves. The mechanism of Ta migration is proposed to be due to the ease of Ta oxidation. Explore books by Francesca Iacopi with our selection at. Click and Collect from your local Waterstones or get FREE UK delivery on orders over £20.

1. Introduction. Copper and low-k dielectrics are used in place of aluminum and silicon oxide as high performance microelectronics devices.The stress voiding in Cu has shown certain typical physical failure characteristics such as a large void formed near a via under a via or in the bottom of a via especially where a narrow via meets a wide line or pad. The use of such materials is challenging in the field of mechanical reliability, such as stress-induced voiding in copper interconnects and cracking of low-k dielectrics. Up to now these two. Apr 29, 2008 · Electromigration experiments using Cu∕low-k interconnect tree structures were carried out in order to study the effects of active atomic sinks and reservoirs on interconnect reliability. In all cases, failures occurred after a long period of void growth. Kinetic parameters were extracted from resistance versus time data, giving Dz0,eff=3.9×10−10m2∕s and z=0.40±0.12. EBSD, electrical testing, interconnect reliability, thermomechanical cycling, thermomechanical fatigue, thin film fatigue Advanced communications and Electronics Created April 1, 2005.

• Who’s who in Engineering Academia listing atsince 2005 • 2006 Spring MRS F Symposium Organizer: Materials, Technology, and Reliability of Low-k Dielectrics and Copper Interconnects, 05-06 • Marie Curie Host Fellowship Recipient, 5-7/05 • International Journal of Nanotechnology Guest Editor, 7/2005. May 21, 2020 · Thermal Performance and Reliability Characterization of Bonded Interface Materials BIMs 14th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, Orlando, FL, May 27–30, pp.

Nov 01, 2007 · Electromigration studies of copper interconnects with a metal coating on the top surface of copper damascene lines have been shown to significantly improve electromigration lifetime.From Fig. 3, the same conclusion can be drawn for thermal fatigue.For a given lifetime, more than 20% current density may be supported by the copper lines with CoWP SAB compared to Cu lines without any cap. Journal of Materials Science and Technology aims to enhance the international exchange of scientific activities in materials science and technology. The Journals reports principally the achievements of materials science and engineering all over the world, putting the stress on the original research papers, review articles invited by editor, letters, research notes with novelty as well as.

Wang, G., X. Zhang, and P. S. Ho, “Chip-Packaging Interaction and Reliability Impact on Cu/Low k Interconnects,” Conference Proceedings of the Eighth International Workshop on Stress-Induced Phenomena in Metallization, Dresden, Germany, September 12-14, 2005, AIP Conference Proceedings Volume 817, pp. 73-82, February 2006. May 18, 2007 · Xie and A. J. Muscat, in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, MRS Symposia Proceedings No. 812 Materials Research Society, Warrendale, PA, 2004, p. Aug 18, 2008 · 1 Silicon Technology Solutions, Freescale Semiconductor Inc., Hudson Valley Research Park, 2070 Route 52, Hopewell Junction, New York 12533, USA; 2 Silicon Technology Solutions, Freescale Semiconductor Inc., MD K10, 3501 Ed Bluestein Boulevard, Austin, Texas 78721, USA; 3 Interconnect and Packaging Group, The University of Texas at Austin, PRC/MER, Mail Code R8650,. 2010 2008 2006 2005 2004 2003 2002 2001 2000 C125. C.V. Thompson, The Effects of Pre-existing Voids on Electromigration Lifetime Scaling, Proc. Solid State Devices and Materials Conference, Tok. A.A. Maznev, M. Gostein, and S.H. Brongersma, "Characterization of electroplated copper films with laser-generated surface acoustic waves", in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, Materials Research Society Proceedings Vol. 766, Materials Research Society, Warrendale, 2003 p. 415-420.

Kraft, K.W. Schwarz, S.P. Baker, R. Hull, and L.B. Freund,proceedings of the symposium, Dislocations and Deformation Mechanisms in Thin Films and Small Structures, held at the 2001 Spring Meeting of the Materials Research Society in San Francisco, CA, USA Proceedings volume 673, Materials Research Society, Warrendale, PA, 2001. Modeling the impact of layout variation on process stress in Cu/low k interconnects MRS Proceedings, Volume. low k interconnect performance and reliability. MRS Proceedings, Volume 863 2005. There is an increasing demand for electronic devices with smaller sizes, higher performance and increased functionality. The development of vertical interconnects or through silicon vias TSV may be one of the most promising approaches to provide the three.

Jun 28, 2018 · Z. S. Choi et al., “Multi-via electromigration test structures for identification and characterization of different failure mechanisms”, in Materials, Technology and Reliability of Advanced Interconnects-2005, vol. 863, 2005, pp. 271-276. Reliability of BGA Solder Joints on the Au/Ni/Cu Bond Pad-Effect of Thicknesses of Au and Ni Layer. IEEE Transactions on Device and Materials Reliability 2006, 6 3, 421-428. DOI: 10.1109/TDMR.2006.881451. Krishtab, K. Vanstreels, S. De Gendt, and M. Baklanov, in IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference IITC/MAM 2015, pp. 103-106. Beamline publications by area of interests General beamline info: 'Submicron X-ray Diffraction' A.A.MacDowell, R.S.Celestre, N.Tamura, R.Spolenak, B.C. Valek, W.L.

Reliability for Advanced Interconnects and Low-k Dielectrics”, MRS Symposium Proceedings Volume 612 Warrendale, 2001. Co-Organizer of Materials Research Society Symposium on “ Materials, technology and reliability for. 1. Introduction. Large scale integrated circuits ULSI technology for 45 nm node and beyond needs ultra-low dielectric constant k films for Cu interconnects.Introduction of pores to silica films can reduce the k-value, while it deteriorates the dielectric stability due to water adsorption from air and it weakens the mechanical strength.The hydrophobicity of porous silica films is achieved.

Along with constantly emerging of the new materials and technology of package, it will cause a lot of problems in our environment. Technology & Reliability for Advanced Interconnects.,series. Journal Publications: S. Chen, R. Huang, K. Ravi-Chandar, Linear and nonlinear poroelastic analysis of swelling and drying behavior of gelatin-based hydrogels.International Journal of Solids and Structures 195, 43-56 2020. DOI; R. Huang, Bending with slip.Nature Materials 19, 259-260 2020. This article discusses the resistivity scaling challenges associated with the use of high aspect ratio trenches as W interconnects for the sub-130-nm semiconductor technology node. In this work, chemical-vapor deposition of W is employed to manufacture conductive trenches in a deposition sequence that includes a TiN barrier, a nucleation W, and a bulk W film. 6. Materials for Advanced Encapsulation-- N. Hackett. 7. Recent Developments in the Chemistry of Lithography for Electronics Production-- D. Merricks. 8. Ferroelectric Polymers-- J.A. Chilton. 9. Polymers in Printed Circuit Board PCB and Related Advanced Interconnect Applications-- M. Goosey. 10.

On the Relationship of CMP Wafer Nanotopography to Groove-Scale Slurry Transport - Volume 867 - Gregory P. Muldowney Skip to main content Accessibility help We use cookies to distinguish you from other users and to provide you with a better experience on our websites. The transition in manufacturing from AlCu/W to Cu multilevel on-chip line/via ULSI wiring for high-performance CMOS logic chips was initiated in late 1997 and has since become the exclusive indus.

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