Materials Reliability in Microelectronics II: Volume 265 (MRS Proceedings) » holypet.ru

Materials reliability in microelectronics II: symposium held April 27-May 1, 1992, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, v. 265. Other Titles: Materials reliability in microelectronics 2.Materials Research Society symposium proceedings,\/span> \u00A0\u00A0\u00A0 schema. 978-1-107-40987-3 - Materials Reliability Issues in Microelectronics: Materials Research Society Symposium Proceedings: Volume 225 Editors: James R. Lloyd, Frederick G. Yost and Paul S. Ho Frontmatter Moreinformation. Get this from a library! Materials reliability issues in microelectronics: symposium held April 30-May 3, 1991, Anaheim, California, U.S.A. [J R Lloyd; Frederick G Yost; P S Ho; Materials Research Society.;]. Feb 15, 2011 · Volume 265 Symposium H – Materials Reliability in Microelectronics II 1992, 283 Imaging VLSI Cross Sections by Atomic Force Microscopy Gabi Neubauer a1, M. Lawrence a1, A. Dass a1 and Thad J. Johnson. The Journal Impact 2019-2020 of Microelectronics Reliability is 1.740, which is just updated in 2020.Compared with historical Journal Impact data, the Metric 2019 of Microelectronics Reliability grew by 12.99 %.The Journal Impact Quartile of Microelectronics Reliability is Q2.The Journal Impact of an academic journal is a scientometric Metric that reflects the yearly average number of.

Get this from a library! In-line characterization, yield, reliability, and failure analysis in microelectronic manufacturing II: 31 May-1 June 2001, Edinburgh, UK. [Gudrun Kissinger; Larg H Weiland; Society of Photo-optical Instrumentation Engineers.; Scottish Enterprise.; European Optical Society.; Institution of Electrical Engineers.; SPIE Digital Library.;]. Unpassivated 2.1μm and 1.1μm wide lines of Al-4wt.%Cu have been electromigration-stressed to failure under accelerated testing conditions up to 300 °C and 2 x 10 10 A m-2.The line resistance and microstructure and the development of electromigration damage are discontinuously recorded. Knorr, D. B. and Rodbell, K. P. 1996. The role of texture in the electromigration behavior of pure aluminum lines.Journal of Applied Physics, Vol. 79, Issue. 5, p. 2409.

Lloyd, J. R., “ Black’s law revisited—Nucleation and growth in electromigration failure,” Microelectronics Reliability, vol. 47, pp. 1468 – 1472, 2007. Recommend this journal Email your librarian or administrator to recommend adding this journal to your organisation's collection. Volume 391 Symposium T – Materials Reliability in Microelectronics V 1995, 459 The Electromigration and Failure Behaviour in Layered Tungsten Via Structures. C. Chiang, G. Neunauer, A. S. Mack, K. Yoshioka, G. Cuan, P. A. Flinn, and D. B. Fraser, Materials Reliability in Microelectronics II, Materials Research Society Symposium Proceedings, edited by C. V. Thompson and J. R. Lloyd Materials Research Society, Pittsburgh, 1992, Vol. 265, p. 219., Google Scholar; 28. A. K.

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