Materials Issues in Microcrystalline Semiconductors: Volume 164 (MRS Proceedings) »

Feb 21, 2011 · Volume 164 Symposium H – Materials Issues in Microcrystalline Semiconductors 1989, 223 Picosecond Photomodulation Study of Nanocrystalline Hydrogenated Silicon. Materials issues in microcrystalline semiconductors: symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A. Feb 21, 2011 · Volume 164 Symposium H – Materials Issues in Microcrystalline Semiconductors 1989, 291 Optoelectronics and Photovoltaic Applications of Microcrystalline Sic.

Feb 21, 2011 · Volume 164 Symposium H – Materials Issues in Microcrystalline Semiconductors 1989, 329 Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method T. Matsuyama a1, M. Nishikuni a1, M. Kameda a1, S. Okamoto a1, M. Tanaka a1, S. Tsuda a1, M. Ohnishi a1, S. Nakano a1 and Y. Kuwano a1. Particle-Size Distribution of CdSe Quantum Dots Determined by Photoluminescence Spectroscopy - Volume 164 - E.N. Prabhakar, C.A. Huber, D. Heiman.

Strained Quantum Dots in Porous Silicon - Volume 283 - Xue-Shu Zhao, Peter D. Persans, John Schroeder, Yeun-Jung Wu. Feb 01, 2001 · Hydrogenated microcrystalline silicon μc-Si:H is intensively studied as a perspective material for tandem photovoltaic cells, mainly because of its stability against light-induced degradation, the main problem of amorphous hydrogenated silicon a-Si:H. Improved stability is connected in μc-Si:H to the existence of crystallites,. The. Materials Issues in Microcrystalline Semiconductors, Materials Research Society Symposium Proceedings Vol. 164, edited by P. M. Fauchet, K. Tanaka, and C. C. Tsai Materials Research Society, Pittsburgh, 1990. Problems at the end of selected chapters can be used to test the knowledge of the reader on the material covered therein, as well as providing a working model of the analysis that can be easily.

Conference: MRS Fall Meeting: Symposium on “Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, At Fall Meeting, Boston USA, Volume: MRS Proceedings of. The influence of the plasma excitation frequency on the growth conditions and the material properties of microcrystalline silicon prepared by plasma enhanced chemical vapor deposition at low deposition temperature is investigated. It is found that an increase of the plasma excitation frequency leads to a simultaneous increase of the growth rate, the grain size, and the Hall mobility of. May 01, 2006 · Nanocrystalline materials have been the subject of widespread research over the past couple of decades with significant advancement in their understanding especially in the last few years.As the name suggests, they are single or multi-phase polycrystals with nano scale 1 × 10 −9 –250 × 10 −9 m grain size. At the upper limit of this regime, the term “ultrafine grain size” is. Jul 01, 2003 · 1. Introduction. Hydrogenated microcrystalline silicon μc-Si:H was first fabricated in 1968 by Veprek and Maracek, it was obtained here by a special kind of plasma-deposition technique, involving chemical vapor transport.Thereafter, Usui et al. as well as Spear et al. reported about μc-Si:H layers obtained by what was later to become the standard form of radio frequency glow discharge.

Materials Issues in Microcrystalline Semiconductors: Volume 164 (MRS Proceedings)

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