Materials and Processes for Nonvolatile Memories: Volume 997 (MRS Proceedings) » holypet.ru

Volume 997 Symposium I – Materials and Processes for Nonvolatile Memories II 2007, 0997-I05-03 Resistance Non-volatile Memory – RRAM Alex Ignatiev a1, Naijuan Wu a2, Xin Chen a3, Yibo Nian a4, Christina Papagianni a5, Shangqing Liu a6 and John Strozier a7. Recent Progress in Ferroelectric Random Access Memory Technology - Volume 997 - Hiroshi Ishiwara, Hiroshi Ishiwara. Skip to main content. We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Resistance Switching In Ferroelectric Materials - Volume 997 - Tingkai Li, Sheng Teng Hsu. Symposium I – Materials and Processes for Nonvolatile Memories II 2007, 0997-I05-02; Resistance Switching In Ferroelectric Materials. Tingkai Li a1. MRS Online Proceedings Library OPL ISSN: - EISSN: 1946-4274.

Volume 997 Symposium I – Materials and Processes for Nonvolatile Memories II 2007, 0997-I06-01 ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On/off Current Ratio Eisuke Tokumitsu a1, Masaru Senoo a2, Etsu Shin a3 and Tomofumi Fujimura a4. Feb 01, 2011 · Volume 997 Symposium I – Materials and Processes for Nonvolatile Memories II 2007, 0997-I08-07 Investigation of Magnetic Behaviour. Combining a comprehensive material study and electrical trap spectroscopy together with Landau–Ginzburg–Devonshire formalism, a proof of concept for a novel antiferroelectric random access memory is presented. For implementing a nonvolatile random access memory, the capacitors have to be realized in a 3D integrated version.

Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories - Volume 830 - S. Kolliopoulou, D. Tsoukalas, P. Dimitrakis, P. Normand, S. Paul, C. Pearson. 978-1-107-40829-6 - Materials and Physics for Nonvolatile Memories: Materials Research Society Symposium Proceedings: Volume 1160 Editors: Yoshihisa Fujisaki, Rainer Waser, Tingkai Li and Caroline Bonafos Table of Contents More information. Dec 13, 2017 · PCMs are usually characterized by a volume reduction of the order of 6%–7% at crystallization, which can limit the reliability of memory devices after multiple cycles. The consequences of this volume change and the strategies to reduce it are presented in section 3.3. Finally, interfacial phase-change memories iPCMs, a novel type of.

Prospect of Emerging Nonvolatile Memories - Volume 830 - Hongsik Jeong, Kinam Kim. Skip to main content Accessibility help We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to. Volume 830 Symposium D – Materials and Processes for Nonvolatile Memories 2004, D2.1 Ferroelectric Thin Film Depositions for Various Types of FeRAMs Ferroelectric Random Access Memories. Materials Research Society website: Materials and processes for nonvolatile memories II is "Symposium I from the 2007 MRS Spring Meeting." Earlier conferences called: Symposium D, "Materials and Processes for Nonvolatile Memories" 2004: Boston, Mass.. Description: xv, 374 pages: illustrations; 24 cm. Series Title. Materials Research Society Symposium Proceedings x DILUTE MAGNETIC. Volume 1156— Materials, Processes and Reliability for Advanced Interconnects for Micro- and. Volume 1160 — Materials and Physics for Nonvolatile Memories, Y. Fujisaki, R. Waser, T. Li, C. Bonafos, 2009, ISBN 978-1-60511-133-9.

Materials and Processes for Nonvolatile Memories: Volume 830 2004 MRS Proceedings. A. Claverie, D. J. M. Slaughter; Book. Materials and Processes for Nonvolatile Memories II: Volume 997 2007 MRS Proceedings. Tingkai Li, Yoshihisa Fujisaki, J. M. Slaughter, Dimitris Tsoukalas; research-article. Evaluation of capacitive surface stress.

Materials and Processes for Nonvolatile Memories: Volume 997 (MRS Proceedings)

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