Materials and Physics for Nonvolatile Memories: Volume 1160 (MRS Proceedings) » holypet.ru

: Materials and Physics for Nonvolatile Memories: Volume 1160 MRS Proceedings 9781107408296: Yoshihisa Fujisaki, Rainer Waser, Tingkai Li, Caroline Bonafos: Books. 978-1-107-40829-6 - Materials and Physics for Nonvolatile Memories: Materials Research Society Symposium Proceedings: Volume 1160 Editors: Yoshihisa Fujisaki, Rainer Waser, Tingkai Li and Caroline Bonafos Table of Contents More information.

Volume 1160 Symposium H – Materials and Physics for Nonvolatile Memories 2009, 1160-H09-03 A Simulation Model of Resistive Switching in Electrochemical Metallization Memory Cells ECM Stephan Menzel a1, Bart Klopstra a2, Carsten Kügeler a3, Ulrich Böttger a4, Georgi Staikov a5 and Rainer Waser a6. Get this from a library! Materials and physics for nonvolatile memories: symposium held April 14-17, 2009, San Francisco, California, U.S.A. [Yoshihisa Fujisaki; Materials Research Society. Fall Meeting;]. Materials And Physics For Nonvolatile Memories: Volume 1160 mrs Proceedings $157.00. Free shipping. Migration and the Making of Industrial S?o Paulo: By Fontes, Paulo. $39.56. Free shipping. Health Care opposing Viewpoints $46.69. Free shipping. This symposium aims to gather the most innovative research in the field of materials and materials-related concepts for non-volatile memories NVM, devices at the heart of all appliances that need to handle and keep information. The current market leader is Flash NAND, but it is expected that in the coming 5 years different emerging concepts will trigger new applications, posing several.

S. K. Lai, "Flash memories: successes and challenges," IBM Journal of Research and Development, vol. 52, no. 4.5, pp. 529- 535, 2008. Google Scholar; H. C. Chin, C. S. Volume 1160 Symposium H – Materials and Physics for Nonvolatile Memories 2009, 1160-H14-11 Conformal MOCVD Deposition of GeSbTe in High Aspect. Materials and processes for nonvolatile memories symposium Boston, Massachusetts November 30 - December 2 2004. - proceedings. Warrendale, Pa.: Materials Research Society, 2005, S. 319 - 324 Materials Research Society symposium proceedings 830. Current Applied Physics, Vol. 10, Issue 1, Supplement 1, January 2010, pp. e2-e4. A. Abdul Aziz, N. Soin, "Dependency of threshold voltage on floating gate and inter-polysilicon dielectric thickness for nonvolatile memory devices", 2010 IEEE International Conference on Semiconductor Electronics ICSE, 2010, pp. 83 - 87.

Materials Research Society: Pages: 181-186: Number of pages: 6: ISBN Print 978-1-60511-041-7: Publication status: Published - 2008: Event: Symposium on Materials Science and Technology for Nonvolatile Memories held at the 2008MRS Spring Meeting -,.

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