Fundamentals of Beam-Solid Interactions and Transient Thermal Processing: Volume 100 (MRS Proceedings) » holypet.ru

Composition and Structure of Si3n4 Implanted with Ti AT.

Feb 26, 2011 · Volume 100 Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing 1988, 201 Composition and Structure of Si 3 n 4 Implanted with Ti AT 900°C. MRS symposia are interdisci-plinary, spanning the range from basic research to applications. The goal is to insure that all possible physical, chemical, and engineering insights are considered for the topics under examination. Symposia topics are: A. Fundamentals of Beam-Solid Interactions and Transient Thermal Processing. Volume 235 Symposium A – Phase Formation and Modification by Beam-Solid Interactions 1991, 27 Energetic Electron Beam Induced Recrystallization of Ion Implantation Damage in Semiconductors.

MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS ISSN 0272- 9172 Volume 1—Laser and Electron-Beam Solid Interactions and Materials Processing, J. F. Gibbons, L. D. Hess, T. W. Sigmon, 1981 Volume 2—Defects in Semiconductors, J. Narayan, T. Y. Tan, 1981 Volume 3—Nuclear and Electron Resonance Spectroscopies Applied to Materials. Volume 100 Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing 1988, 675 Nmos Transistors Fabricated by Simultaneous Laser-Assisted Crystallization and Diffusion on Silicon on Electro-Optic PLZT J. H. Wang a1, T. H. Lin a1, S. C. Esener a1, S. Dasgupta a1 and S. H. Lee a1.

The authors report transient conductance measurement of liquid/solid interface velocities during pulsed laser melting of amorphous Si a-Si films on crystalline Si c-Si, and a more accurate. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS ISSN 0272 - 9172 Volume 1—Laser and Electron-Beam Solid Interactions and Materials Processing, J. F. Gibbons, L. D. Hess, T. W. Sigmon, 1981 Volume 2—Defects in Semiconductors, J. Narayan, T. Y. Tan, 1981 Volume 3—Nuclear and Electron Resonance Spectroscopies Applied to Materials. Full text of "DTIC ADA229587: Processing Science of Advanced Ceramics.Materials Research Society Symposium Proceedings. Volume 155" See other formats. The quality of large semiconductor crystals grown from the melt for use in electronic and optoelectronic devices is strongly influenced by the intricate coupling of. Sep 12, 2004 · 12. D. A. Lilienfeld, in “Fundamentals of beam-solid interactions and transient thermal processing,” edited by M. J. Aziz, L. E. Rehn and B. Stritzker Materials.

This process is experimental and the keywords may be updated as the learning algorithm improves. Leave from the Department of Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213. and T.B. Massalski: inFundamentals of Beam-Solid Interactions and Transient Thermal Processing, Materials Research Society Proceedings 100, M.J. We use cookies to make interactions with our website easy and meaningful, to better understand the use of our services, and to tailor advertising. For further information, including about cookie.

Feb 01, 1990 · Damage-free single crystals of Al 2 O 3 were implanted at liquid nitrogen temperature with In ions at 100 keV energy to a high dose of 6 × 10 16 ions/cm 2.Implantation produced an amorphous surface layer about 80 nm thickness having an abrupt interface with the underlying single crystal. Silicon samples, implanted with 25–100 keV P along the [100] channeling and the random equivalent directions, were subjected to thermal annealing over a temperature range of 600–1050 °C. A model for laser melting of carbon at high temperatures to form liquid carbon has been developed. This model is solved numerically using experimental data from laser irradiation studies in graphite consistent with a melting temperature for graphite of 4300 K. The parameters for high‐temperature graphite are based on the extension of previously measured thermal properties into the high.

Energetic Electron Beam Induced Recrystallization of Ion.

Thin Solid Films, 182 1989 215-228 PREPARATION AND CHARACTERIZATION 215 THIN FILM PROCESSING WITH PULSED ELECTRON BEAMS E. D'ANNA, G. LEGGIERI AND A. LUCHES Universita' di Lecce, Dipartimento di Fisica, 1-73100 Lecce Italy Received October 7, 1988; revised March 29, 1989; accepted July 3, 1989 Pulsed electron beam applications for thin film processing. "A Low Temperature Single-Step RTA Process to Form Ultra-Thin CoSi2 for MOSFET Applications," Proceedings of the Materials Research Society Symposium,Vol 402 pp. 209-214, 1996. Symposia Proc.: Energy Beam-Solid Interactions and Transient Thermal Processing, J. C. C. Fan and N. M. Johnson, editors, North-Holland, New York, pp. 587-593, 1984. Jan 01, 1990 · Volume 9, number 2,3 MATERIALS LETTERS January 1990 VERY-LOW-TEMPERATURE LIQUID-PHASE EPITAXIAL GROWTH OF SILICON Soo Hong LEE, Stephen A. HEALY, Trevor L. YOUNG and Martin A. GREEN Joint Microelectronics Research Centre, University of New South Wales, Kensington, Australia 2033 Received 13 November 1989 Uniform silicon epitaxial. The application of ferroelectrics such as SrTiO3 or PbZrxTi1−xO3 to the insulator of DRAM cell capacitors has been extensively studied. The bottom electrode Pt / Ti for these ferroelectrics.

ELSEVIER Applied Surface Science 86 1995 202-207 applied surface science New approach of a laser-induced forward transfer for deposition of patterned thin metal films Hilmar Esrom a, Jun-Ying Zhang b, Ulrich Kogelschatz c, Anthony J. Pedraza a Fachhochschulefiir TechnikMannheim, Speyererstrasse 4, D-68163 Mamdwim, Germany b Asea Brown BoveriAG, Corporate Research, D-690115 Heidelberg. A comparative study on metal pattern deposition of mm2-area by ablating chromium and titanium thin films from an optically transparent support and transferring the ablated material onto another substrate in close proximity with a single laser pulse LIFT is reported. The role of support-film interface and film-to-substrate distance in determining both ablation and transfer is discussed.

Fundamentals of Beam-Solid Interactions and Transient Thermal Processing: Volume 100 (MRS Proceedings)

Jan 23, 2013 · The physical mechanisms dominant in thermal processing such as the global balance of the thermal energy 32,33 32. V. The physical path in the phase space of a preselected material volume during beam–matter interaction for a fs-pulse related to the processing domain cold ablation. The transient time t Kn for the build-up of a. Beam‐Solid Interactions: Fundamentals & Applications, Fall MRS, 1992. 5. Tenth International Conference on Ion Beam Modification of Materials, held in Albuquerque, NM, Sept. 1 ‐ 6, 1996 6. Thin Films: Stresses and Mechanical Properties, MRS, December 1997 7.

  1. Mayer, J. W., 1983 MRS Symposium on Energy Beam Solid Interactions and Transient Thermal Processing. 3. Gibbons, J. F., 1983 MRS Symposium on Energy Beam Solid Interactions and Transient Thermal Processing.
  2. Cambridge Core - MRS Online Proceedings Library OPL - Volume 35Energy Beam-Solid Interactions and Transient Thermal Processing/1984 D.K. Biegelsen, G.A. Rozgonyi, C.V. Shank. Applications of Beam-Solid Interactions in Semiconductor Material and Device Processing.

Jan 01, 1989 · Because of the large grain-boundary-to-volume ratio for material with an average grain size 5-7 nun, surface modes are expected to play an important role in the Raman spectrum. Roorda, S. Saito and W.C. Sinke, in: Fundamentals of Beam-Solid Interactions and Transient Thermal Process_;, MRS Symp. Proc. 100, Eds. M.J. Puiz~ L.E. Rehn and B. The minimum 248 nm, 25 ns, and 532 nm, 15 ns laser fluences required to blow off thin gold films from optical quartz have been measured as a function of film thickness. The films apparently blow off when the gold‐quartz interface reaches the normal boiling point of gold. Even though the initial reflectivities at the two wavelengths are very different, the actual laser fluences required to.

Culbertson and S. J. Pennycook, in Materials Research Society Symposium on Fundamentals of Beam‐Solid Interactions and Transient Thermal Processing, MRS Fall Meeting, Boston, 1987. Google Scholar 6. Ion beam assisted processes represent an emerging technology used to change the surface properties of materials at low temperature, thus avoiding diffusion in the bulk.

The minimum 248 nm, 25 ns, and 532 nm, 15 ns laser fluences required to blow off thin gold films from optical quartz have been measured as a function of film thickness. The films apparently blow of. Many observed after-transient properties of an irradiated sample can be interpreted in terms of the heat flow transient structure and quantitatively related to its details. As an example of this, normal and Soret diffusion, precipitation, surface oxidation and non-equilibrium segregation will be discussed. The superconducting long filaments of Pb45Bi35 Sn20 and Pb45Bi40Te15 alloys with a high Tc of 10.1 and 10.2 K, respectively, were produced by glass-coated melt spinning.

A model for the detector response function in neutron depth profiling, Myung C. Lee, K. Verghese and R. P. Gardner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 31, Issue 4, 1 June 1988, Pages 567-575 Implanted boron profiles in silicon, M. Behar, M. Weiser S. Kalbitzer, D. Fink, and F. L. Grande, Nuclear Instruments and. Materials Research Society Fellow SPIE Fellow OSA. COMMITTEE SERVICE AT WSU:. "Excimer Laser Induced Damage in Stressed Polyimide Films," MRS Symposium Proceedings, Vol. 100: Fundamentals of Beam-Solid Interactions and Transient Thermal Processing, M. J. Aziz. S. Marengo, P. Comotti, S. Scappatura and M. Vasconi, Experimental studies of transient thermal effects during catalytic oxidation in a packed-bed reactor, Dynamics of Surfaces and Reaction Kinetics in Heterogeneous Catalysis, Proceedings of the International Symposium, 10.1016/S0167-29919780429-6, 429-437, 1997. The effect of the transient-enhanced. its transient-enhanced outdiffusion occurring early in the process of rapid thermal annealing, slows down the diffusion of the. D. I. Proskurovsky, and L. V. Yakovleva, Beam–Solid Interaction—Fundamentals and Application, Proceedings MRS-92 Meeting, Boston, 1993, Vol. 279, p. 63. Google Scholar; 6.

S. Marengo, P. Comotti, S. Scappatura, M. Vasconi, Experimental studies of transient thermal effects during catalytic oxidation in a packed-bed reactor, Dynamics of Surfaces and Reaction Kinetics in Heterogeneous Catalysis, Proceedings of the International Symposium, 10.1016/S0167-29919780429-6, 429-437, 1997. Books; Dr. Appleton Resume; Refereed Journal Articles; Refereed Journal Articles. Refereed Journal Articles. W. M. Gibson, C. Erginsoy, H. E. Wegner, and B. R. 56. A.A. Maznev, M. Gostein, and S.H. Brongersma, "Characterization of electroplated copper films with laser-generated surface acoustic waves", in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, Materials Research Society Proceedings Vol. 766, Materials Research Society, Warrendale, 2003 p. 415-420. Our goals are 1 to develop novel design configurations for transient reactors and identify integration schemes for development of highly efficient, intimately integrated, and controllable hydrogen generators, 2 to quantify interactions between heat and mass transfer and strong surface chemical/phase transformations i.e., adsorption. Oct 22, 2019 · In the same work thermal conductivity as a function of grainsize was calculated, assuming two values of the thermal conductivities of 100 W m −1 K −1 full circle or 34.5 W m −1 K −1 full square for single-crystalline MoS 2, as shown in figure 15. In the small grain size limit below 100 nm the grain boundaries play the major role.

Jan 01, 1999 · Brown W L 1983 Energy-Beam Solid Interactions and Transient Thermal Processing Symp., Boston MRS Meeting to be published Google Scholar Brown W L 1984 Ion Implantation and Beam Processing ed J S Williams and J M Poate New York: Academic p 99. Analytical and numerical results show that non-Fourier effects, including the higher peak temperature and thermal stress, greater temperature difference between components, and stronger thermal noise, are significant to IC chip reliability. SPIE Vol. 797 Advanced Processing of Semiconductor Devices 1987 SPIE Vol. 797 A dvanced Processing of Semiconductor Devices 1987 / / 77 The silicon 100 single crystals 500 -,m- thick, 2- 6Q -cm were implanted with 150^ -180 silicon 100 single crystals 500-ym-thick 2~6ft-cm were implanted with 150^180 ions O4" to a dose of 1.6-2.

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