Doping Engineering for Front-End Processing: Volume 1070 (MRS Proceedings) » holypet.ru

Feb 01, 2011 · Volume 1070 Symposium E – Doping Engineering for Front-End Processing 2008, 1070-E05-01 Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon. Feb 01, 2011 · Micro-uniformity during laser anneal: metrology and physics - Volume 1070 - W. Vandervorst, E. Rosseel, R. Lin, D. H. Petersen, T. Clarysse, J. Goossens, P. F. 978-1-107-40854-8 - Doping Engineering for Front-End Processing: Materials Research Society Symposium Proceedings: Volume 1070 Editors: B. J. Pawlak, M. L. Pelaz, M. Law and K. Suguro Excerpt More information. Journal Article Proceedings Paper Publication status published Journal title DOPING ENGINEERING FOR FRONT-END PROCESSING ISSN 0272-9172 Volume 1070 Pages 261-266 pages Language English UGent publication? yes UGent classification P1 Web of Science type Proceedings Paper Web of Science id 000261429500034 id 445573 Handle. Zographos, Nikolas Zechner, Christoph Martin-Bragado, Ignacio Lee, Kyuho and Oh, Yong-Seog 2017. Multiscale modeling of doping processes in advanced semiconductor devices. Materials Science in Semiconductor Processing, Vol. 62, p. 49. CrossRef; Google Scholar.

Volume 1070 Symposium E – Doping Engineering for Front-End Processing 2008, 1070-E01-02 Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon. Feb 01, 2011 · Millisecond annealing with pulsed flash-lamps or scanned energy beams can create very shallow and abrupt junctions with high concentrations of electrically active carriers, but solutions for volume manufacturing must also meet formidable process control requirements and economic metrics. Materials Research Society Symposium - Proceedings, Vol. 669, 2001, pp. J831-J836, Si Front-end Pr V. Manuylov and M. Temkin, "Simulation of exposure process in complex non planar 2D/3D resist-substrate structures". Front end of line considerations for progression beyond the 100 nm node ultrashallow junction requirements. Materials Science in Semiconductor Processing Pergamon, New York, 1998, Vol. 1, p. 27. MRS invited paper, Spring 1998, Vol. 510, p. 395. Google Scholar; 30. P. Zographos and I. Martin-Bragado, Doping Engineering for Front-End Processing, MRS Symposia Proceedings Vol. 1070 Materials Research Society, Pittsburgh, 2008. Google Scholar 4.

Nov 12, 2004 · Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont, Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt, Journal of Applied Physics, 10.1063/1.4825222, 114, 15, 153510, 2013. Y. Sasaki, K. Okashita, K. Nakamoto, T. Kitaoka, B. Mizuno, and M. Ogura, “ Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B2H6/Helium Self-Regulatory Plasma Doping process,” IEEE International Electron Devices Meeting, 2008 IEDM 2008, 2008, pp. 1– 4. Google Scholar; 9. D. ISBN: 160511040X 9781605110400: OCLC Number: 263131788: Notes: "This volume contains papers presented at Symposium E, 'Doping engineering for front-end processing, ' held March 25-27, 2008 at the 2008 MRS Spring Meeting in San Francisco, California."--Preface.

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