Defects in Electronic Materials: Volume 104 (MRS Proceedings) » holypet.ru

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 104 Defects in Electronic Materials Symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A. EDITORS: Michael Stavola AT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A. SJ. Pearton AT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A. G. Davies. Feb 26, 2011 · Identification of Interstitial Carbon Related Defects in Silicon - Volume 104 - J. L. Benton, M. T. Asom, R. Sauer, L. C. Kimerling. This proceedings volume contains oral and poster contributions from a symposium on Defects in Electronic Materials at the combined meeting of the Materials. Some of the defects created during He processing and one defect introduced by SiCl 4 etching had identical electronic properties to those introduced during high energy MeV He ion bombardment. SiC1 4 etching introduced only two prominent defects, one of which is metastable with electronic properties similar to a metastable defect previously. Volume 104 Symposium E – Defects in Electronic Materials 1987, 623 The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers E. P. Kvam a1, D. J. Eaglesham a1, D. M. Maher a1 a2, C. J. Humphreys a1, J. C. Bean a1, G. S. Green a3 and B. K. Tanner a3.

Two new electron paramagnetic resonance centers are reported, Si‐L8 and Si‐L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient capacitance spectroscopy in electron‐irradiated phosphorus‐doped silicon. Resolved 31 P hyperfine interactions and stress‐induced alignment. Current state-of-the-art defects in silicon are detailed in this proceedings volume. As integrated circuits become more dense, crystalline and other defects in silicon wafers have a greater effect on the properties of the circuits. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 468 Gallium Nitride and Related Materials II Symposium held April 1-4,1997, San Francisco, California, U.S.A. EDITORS: CK. Abernathy University of Florida Gainesville, Florida, U.S.A. H. Amano Meijo University Nagoya, Japan J.C. Zolper Sandia National Laboratories.

Defects in Electronic Materials: Volume 104 (MRS Proceedings)

Volume 46—Microscopic Identification of Electronic Defects in Semiconductors, N. M. Johnson, S. G. Bishop, G. D. Watkins, 1985. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS Volume 71—Materials Issues in Silicon Integrated Circuit Processing, M. Wittmer,. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 84 Scientific Basis for. Volume 144, number 3 PHYSICS LETTERS A 26 February 1990 NEW DEFECT STATES IN IRRADIATED p-TYPE SILICON Kh.A. ABDULLIN, B.N. MUKASHEV, M.F. TAMENDAROV and T.B. TASHENOY Institute of High Energy Physics of the Academy of Sciences of the Khazakh SSR, 480082 Alma-Ata 82, USSR Received 15 September 1989; accepted for publication 9 November 1989. This proceedings volume contains oral and poster contributions from a symposium on "Defects in Electronic Materials" at the combined meeting of the Materials Research Society MRS and the International Conference on Electronic Materials ICEM in December, 1996, in Boston. The volume comprises the areas of defects in group III-V, and wide bandgap semiconductors.

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