Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices - 1999: Volume 557 (MRS Proceedings) »

SYMPOSIUM PROCEEDINGS VOLUME 557 Amorphous and Silicon Thin Films: Fundamentals to Devices—1999 Symposium held April 5-9, 1999,San Francisco, California, U.S.A. EDITORS: Howard ML Branz Notional Renewable Energy Laboratory Golden, Colorado, U.S.A. Robert W. Collins The Pennsylvania State University University Park, Pennsylvania, U.S.A. Hiroaki Okamoto. May 09, 1999 · Applications requiring large-area semiconductor coverage rely increasingly on amorphous and heterogeneous silicon materials because they can be deposited at low cost on a variety of substrates. This volume, first published in 1999, covers the range from fundamental research to the device applications of these materials. Volume 557 Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 1999, 821 Resistless Patterning of Hydrogenated Amorphous Silicon Films Russell E. Hollingsworth a1, Mary K. Hemdon a2, Reuben T. Collins a2, J.D. Benson a3, J.H. Dinan a3 and J.N. Johnson a4. Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557 Howard M. Branz, Robert W. Collins, Hiroaki Okamoto, Subhendu Guha, Ruud E. I. Schropp. Volume 557 Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 1999, 671 Temperature Dependent Transient Leakage Currents in Amorphous Silicon Thin Film Transistors.

"Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices 1999". Vol. 557 of the MRS Symposium Proceedings Series "Amorphous and Heterogeneous Silicon Thin Films 2000". 2000 MRS Spring Meeting. R W Collins, H M Branz, S Guha, H Okamoto and M Stutzmann Editors. An image sensor with enhanced sensitivity for near ultraviolet radiation UVA has been fabricated in TFA Thin Film on ASIC technology. The device employs an amorphous silicon pin detector optimized for UV detection by carbonization and layer thickness variation. phous silicon as well. Thepresence ofH2 molecules in a-Sihad been considered previously, but mainly in the context ofmolecular hydrogen trapped in voids or microbubbles [20, 21]. Device-qualityhydrogenated amorphous silicon typically contains up to 15% hydrogen — a concentration that is much larger than the amount of hydrogen needed to. Hydrogenated silicon Si-H thin films were deposited from a mixture of pure silane SiH4 and hydrogen H2 gases in a home-built plasma enhanced chemical vapour deposition PECVD system using.

Advances in plasma-enhanced chemical vapor deposition of silicon films at low temperatures. Current Opinion in Solid State and Materials Science, Vol. 6, Issue. 5, p. 425. Current Opinion in Solid State and Materials Science, Vol. 6, Issue. 5, p. 425. Boron- and phosphorous-doped hydrogenated nanocrystalline silicon thin films deposited by HWCVD on plastic PEN and PI at a substrate temperature of 150 °C show high dark conductivity, suitable for device operation. σ d-values of 4.7 and 2.8 S/cm were obtained for n- and p-type films, respectively, deposited on PEN.

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